LDMOS Transistors and Amplifier ICs

Cellular (700 MHz to 1000 MHz) GO ▶
	Infineon offers an extensive line of high power RF transistors and ICs for applications in the 700 MHz to 1000 MHz frequency band. With power levels from 20 W to 360 W, these transistors and ICs are suitable for use in power amplifiers for GSM/EDGE, CDMA, CDMA2000 and WCDMA applications. Manufactured with our advanced LDMOS technology and high-volume, fully-automated assembly and test lines, these products provide unsurpassed reliability and consistency. They are all RoHS-compliant.

Cellular (700 MHz to 1000 MHz)

Infineon offers an extensive line of high power RF transistors and ICs for applications in the 700 MHz to 1000 MHz frequency band. With power levels from 20 W to 360 W, these transistors and ICs are suitable for use in power amplifiers for GSM/EDGE, CDMA, CDMA2000 and WCDMA applications. Manufactured with our advanced LDMOS technology and high-volume, fully-automated assembly and test lines, these products provide unsurpassed reliability and consistency. They are all RoHS-compliant.

Cellular (1800 MHz to 1995 MHz) GO ▶
	Infineon offers an extensive line of RF power transistors for applications in the 1800 MHz to 2000 MHz frequency band. Manufactured with our advanced LDMOS technology and high-volume, fully-automated assembly and test lines, these products provide excellent reliability and consistency. Our packages are RoHS-compliant.

Cellular (2000 MHz to 2200 MHz) GO ▶
	Infineon offers an extensive line of high power RF transistors for applications in the 2100 MHz to 2200 MHz frequency band ranging from 20 watts to 320 watts in power. Manufactured with our advanced LDMOS technology and high-volume, fully-automated assembly and test lines, these products provide excellent reliability and consistency. Our thermally-enhanced packages are Pb-free and RoHS-compliant.

Cellular (2300 MHz to 2700 MHz) GO ▶
	Infineon offers a line of high power RF transistors for applications in the 2400 MHz to 2700 MHz frequency band ranging in power from 25 watts to 280 watts. These transistors are suitable for use in CDMA, CDMA2000, Super3G and WiMAX cellular base station power amplifier designs. Manufactured with our advanced LDMOS technology and high-volume, fully-automated assembly and test lines, these products provide excellent reliability and consistency. Our thermally-enhanced packages are Pb-free and RoHS-compliant.

Cellular (2300 MHz to 2700 MHz)

GO ▶

Infineon offers a line of high power RF transistors for applications in the 2400 MHz to 2700 MHz frequency band ranging in power from 25 watts to 280 watts. These transistors are suitable for use in CDMA, CDMA2000, Super3G and WiMAX cellular base station power amplifier designs. Manufactured with our advanced LDMOS technology and high-volume, fully-automated assembly and test lines, these products provide excellent reliability and consistency. Our thermally-enhanced packages are Pb-free and RoHS-compliant.

General Purpose Transistors (700 MHz to 2200 MHz) GO ▶
	Unmatched LDMOS power transistors for use in amplifier applications between 700 MHz to 2200 MHz. Manufactured with our advanced LDMOS technology, these products provide excellent thermal performance, high reliability and consistency.

UHF Broadcast (470 MHz to 806 MHz) GO ▶
	· High output power (DVB-T) PTVA042502FC P OUT = 55 avg PTVA047002EV P OUT = 135 avg · High gain · High ruggedness · Excellent thermal stability · Integrated ESD protection · Broadband evaluation boards available

UHF & L Band (400 MHz to 1400 MHz) GO ▶
	Infineon offers a family of rugged transistors specifically designed for pulsed applications in the 400 MHz to 1400 MHz frequency band. Our RF power transistors offer high gain, excellent efficiency and high power, enabling the design of compact, highly efficient amplifiers. Manufactured with our advanced LDMOS technology and high-volume, fully-automated assembly and test lines, these products provide excellent reliability and consistency.

UHF & L Band (400 MHz to 1400 MHz)

GO ▶

Infineon offers a family of rugged transistors specifically designed for pulsed applications in the 400 MHz to 1400 MHz frequency band. Our RF power transistors offer high gain, excellent efficiency and high power, enabling the design of compact, highly efficient amplifiers. Manufactured with our advanced LDMOS technology and high-volume, fully-automated assembly and test lines, these products provide excellent reliability and consistency.